This article is cited in 3 papers

Amorphous, glassy, organic semiconductors

Estimation of the temperature of the current filament that forms upon switching in GeSbTe

S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, K. D. Tsendin

Ioffe Institute, St. Petersburg

Abstract: The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the formation of a hot current filament and its gradual cooling. The size and temperatures of the current filament are estimated. It is shown that the characteristic temperature in the hot current filament corresponds to the temperature of the phase transition to the crystalline state.

Keywords: Current Filament, GeSbTe, Current Control Mode, Voltage Oscillations, Chalcogenide Glassy Semiconductors (CGS).

Received: 07.06.2018
Accepted: 18.06.2018

DOI: 10.21883/FTP.2018.12.46765.8931

 English version: Semiconductors, 2018, 52:12, 1607–1610

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