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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 12, Pages 1469–1476 (Mi phts5662)

This article is cited in 12 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

On the intracenter relaxation of shallow arsenic donors in stressed germanium. Population inversion under optical excitation

V. V. Tsyplenkov, V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The relaxation rates of lower excited states $1s(T)$, $2p_{0}$, $2s$, $3p_{0}$, and $2p_{\pm}$ of arsenic donors in a germanium crystal are calculated upon the interaction with long-wavelength acoustic phonons depending on the uniaxial stress in the crystallographic direction [111]. The populations of states under optical excitation are estimated for calculated times. It is shown theoretically that optical excitation of the medium forms an inverse population of arsenic donor levels and leads to the possibility of the implementation of a four-level laser scheme with the radiative transition between $2p$ states and the $1s$ triplet state at zero strain. The estimated value of the expected gain in the medium under optical excitation conditions by CO$_2$ laser radiation in the medium at a donor concentration of 2 $\times$ 10$^{15}$ cm$^{-3}$ is $\sim$0.35 cm$^{-1}$ at a frequency of 1.98 THz if the laser transition is 2$p_{\pm}\to1s(T)$ and 1.25 THz if the laser transition is 2$p_{0}\to1s(T)$.

Keywords: Arsenic Donors, Long-wavelength Acoustic Phonons, Germanium Crystal, Optical Excitation Conditions, Intravalley Transitions.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.12.46759.39


 English version:
Semiconductors, 2018, 52:12, 1573–1580

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