I. V. Samartsev, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, I. Yu. Pashen'kin, N. V. Dikareva, A. B. Chigineva, “Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12,Pages <nobr>1460

This article is cited in 1 paper

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates

I. V. Samartsev^a, S. M. Nekorkin^a, B. N. Zvonkov^a, V. Ya. Aleshkin^b, A. A. Dubinov^b, I. Yu. Pashen'kin^ab, N. V. Dikareva^a, A. B. Chigineva^a

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 $\mu$m grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of -3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.

Keywords: Metamorphic Buffer, GaAs Substrate, InGaAs Active Region, Reverse Dark Current, InGaAs Solid Solution.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.12.46757.36