O. V. Polishchuk, D. V. Fateev, V. V. Popov, “Electrical tunability of terahertz amplification in a periodic plasmon graphene structure with charge-carrier injection”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12,Pages <nobr>1430

This article is cited in 5 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Electrical tunability of terahertz amplification in a periodic plasmon graphene structure with charge-carrier injection

O. V. Polishchuk^a, D. V. Fateev^a, V. V. Popov^ab

^a Saratov Branch of the Institute of Radio Engineering and Electronics
^b Saratov State University

Abstract: The dependence of the plasmon terahertz resonant frequency in the generation mode on the quasi-Fermi energy in the active (ungated) region of graphene with an inverse charge carrier population and on the Fermi energy in the gated $p$- and $n$-type regions in a periodic $p$–$i$–$n$ structure based on graphene with injection pumping is theoretically investigated. It is shown that electrically frequency-tunable nanoscale plasmon graphene amplifiers and generators operating in a broad terahertz frequency range at room temperature can be designed.

Keywords: quasi-Fermi Energy, Injection Pump, Nanoscale Plasmon, Plasmon Amplification, Intraband Processes.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.12.46752.31