XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy

A. P. Gorshkov^a, N. S. Volkova^b, D. A. Pavlov^a, Yu. V. Usov^a, L. A. Istomin^b, S. B. Levichev<sup>b

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod

Abstract: On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the diffusive smearing of the composition near the base and lateral surface as well as the segregation of indium near the vertex. It is established that the wave functions of charge carriers in the ground state are localized in a comparatively small region of the quantum dot near its vertex.

Keywords: Quantum Dots (QD), Diffusive Smearing, Emission Barrier Height, Metal Organic Vapor Phase Epitaxy (MOVPE), Exciton Dipole Moment.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.12.46750.29

 English version: Semiconductors, 2018, 52:12, 1525–1528

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