A. N. Akimov, A. E. Klimov, V. S. Epov, “Field effect in PbSnTe : In films with low conductivity in the mode of injection from contacts and space-charge limitation of the current”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12,Pages <nobr>1401

This article is cited in 2 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Field effect in PbSnTe : In films with low conductivity in the mode of injection from contacts and space-charge limitation of the current

A. N. Akimov^a, A. E. Klimov^ab, V. S. Epov^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University

Abstract: At $T$ = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF$_2$(111) substrates. The obtained results agree with experiments on the effect of treatment of the surface of PbSnTe:In films on the space-charge-limited current with a variation in the current to 10$^3$ times or more. At a qualitative level, the model is considered which assumes the substantial contribution of localized surface states to space charge formed in the mode of space-charge-limited current due to the injection of charge carriers from contacts.

Keywords: PbSnTe, Space Charge Limited Current (SCLC), Localized Surface States, SCLC Mode, Topological Crystalline Insulators (TCI).

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.12.46747.26