This article is cited in 2 papers

Electronic properties of semiconductors

Measurement of the charge-carrier mobility in gallium arsenide using a near-field microwave microscope by the microwave-magnetoresistance method

D. A. Usanov, A. È. Postelga, A. A. Kalyamin, I. V. Sharov

Saratov State University

Abstract: The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.

Received: 16.04.2018
Accepted: 24.04.2018

DOI: 10.21883/FTP.2018.13.46867.8891

 English version: Semiconductors, 2018, 52:13, 1669–1671

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