This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

Deposition of silicon films doped with boron and phosphorus by the gas-jet plasma-chemical method

V. G. Shchukin, R. G. Sharafutdinov, V. O. Konstantinov

S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences

Abstract: Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films ($\alpha$-Si:H) with a conductivity up to 5.2 $\times$ 10$^{-3}$ ($\Omega$ cm)$^{-1}$ are fabricated; when doping with phosphorus, microcrystalline silicon films ($mc$-Si:H) with a crystallinity up to 70% and conductivity at a level of 1 ($\Omega$ cm)$^{-1}$ are fabricated.

Received: 22.05.2018
Revised: 25.06.2018

 English version: Semiconductors, 2019, 53:1, 127–131

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