This article is cited in 4 papers

Semiconductor physics

Effect of the electric mode and $\gamma$ irradiation on surface-defect formation at the Si–SiO$_2$ interface in a MOS transistor

N. A. Kulikov, V. D. Popov

National Engineering Physics Institute "MEPhI", Moscow

Abstract: The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate $P$ = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the $n$-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.

Received: 26.04.2018
Revised: 25.06.2018

DOI: 10.21883/FTP.2019.01.46998.8900

 English version: Semiconductors, 2019, 53:1, 110–113

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