This article is cited in 4 papers

Semiconductor physics

Simulation of the parameters of a titanium-tritide-based beta-voltaic cell

A. A. Svincov^a, E. B. Yakimov^ab, M. V. Dorokhin^c, P. B. Demina^c, Yu. M. Kuznetsov<sup>c

a</sup> Institute of Microelectronics Technology and High-Purity Materials RAS
^b National University of Science and Technology «MISIS», Moscow
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The simulation of $\beta$-voltaic power cells consisting of a combined $\beta$-source and a converter was performed. The TiT$_2$ compound containing the radioactive tritium isotope was selected as the source. As the converter, structures based on semiconductor materials, most commonly used in developing power cells, i.e., Si, SiC, GaAs, were considered. Using the Monte Carlo method, the main source parameters were calculated, in particular, the maximum achievable short-circuit current was estimated.

Received: 10.04.2018
Revised: 17.04.2018

DOI: 10.21883/FTP.2019.01.46995.8884

 English version: Semiconductors, 2019, 53:1, 96–98

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