Micro- and nanocrystalline, porous, composite semiconductors

Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology

P. V. Seredin^a, D. L. Goloshchapov^a, D. S. Zolotukhin^a, A. S. Len'shin^a, A. N. Lukin^a, A. M. Mizerov^b, E. V. Nikitina^b, I. N. Arsent'ev^c, Harald Leiste^d, Monika Rinke<sup>d

a</sup> Voronezh State University
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Ioffe Institute, St. Petersburg
^d Karlsruhe Nano Micro Facility, Eggenstein-Leopoldshafen, Germany

Abstract: Integrated heterostructures exhibiting a nanocolumnar morphology of the In$_{x}$Ga$_{1-x}$N film are grown on a single-crystal silicon substrate ($c$-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In$_{x}$Ga$_{1-x}$N nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the $c$-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In$_{x}$Ga$_{1-x}$N layer. The growth of In$_{x}$Ga$_{1-x}$N nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is $\sim$25% higher than the emission intensity for the film grown on the $c$-Si substrate.

Received: 12.04.2018
Revised: 21.05.2018

DOI: 10.21883/FTP.2019.01.46990.8889

 English version: Semiconductors, 2019, 53:1, 65–71

Bibliographic databases:

•