This article is cited in 1 paper

Micro- and nanocrystalline, porous, composite semiconductors

Dependence of the bulk electrical properties of multisilicon on the grain misorientation parameters

S. M. Peshcherova^a, E. B. Yakimov^b, A. I. Nepomnyashchikh^a, V. I. Orlov^b, O. V. Feklisova^b, L. A. Pavlova^a, R. V. Presnyakov<sup>a

a</sup> Vinogradov Institute of Geochemistry and Analytical Chemistry, Siberian Branch, Russian Academy of Sciences, Irkutsk, Russia
^b Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia

Abstract: The recombination activity of intragrain defects in multicrystalline silicon is investigated by the electron or laser beam induced current methods. The interrelation of the grain orientation with the character of the distribution of intragrain defects (dislocations and impurity inclusions) and their recombination activity is revealed. The defect grain structure is investigated using various etching procedures to reveal the defects. It is shown that the defect density and distribution in the grains depend on their orientation relative the growth axis. Therefore, it is intragrain defects and impurities that are to a large degree responsible for degradation of the nonequilibrium carrier lifetime when compared with grain boundaries.

Received: 10.01.2018
Revised: 11.01.2018

DOI: 10.21883/FTP.2019.01.46988.8814

 English version: Semiconductors, 2019, 53:1, 55–59

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