A. V. Galeeva, M. A. Gomanko, M. E. Tamm, L. V. Yashina, S. N. Danilov, L. I. Ryabova, D. R. Khokhlov, “Photoelectromagnetic effect induced by terahertz radiation in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ topological insulators”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 1,Pages 41

This article is cited in 2 papers

Surface, interfaces, thin films

Photoelectromagnetic effect induced by terahertz radiation in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ topological insulators

A. V. Galeeva^a, M. A. Gomanko^a, M. E. Tamm^b, L. V. Yashina^b, S. N. Danilov^c, L. I. Ryabova^b, D. R. Khokhlov^ad

^a Faculty of Physics, Lomonosov Moscow State University
^b Lomonosov Moscow State University, Faculty of Chemistry
^c Regensburg University, Regensburg, Germany
^d P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow

Abstract: The mobility of surface charge carriers is estimated based on an analysis of the photoelectromagnetic effect in three-dimensional (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ (0 $\le x\le$ 0.55) topological insulators. A high degree of degeneracy of the carrier gas in combination with a low energy of the exciting terahertz quantum provide a nonequilibrium process associated exclusively with thermal heating of the carrier. Under these conditions, the photovoltage is determined by the mobility gradient of the surface and bulk carriers. The photovoltage and, consequently, the mobility gradient disappear completely with an increase in the bulk mobility up to 10$^5$ cm$^2$ V$^{-1}$ s$^{-1}$. Photovoltage is clearly observed in the samples with comparatively low bulk mobility under the same experimental conditions.

Received: 03.07.2018
Revised: 09.07.2018

DOI: 10.21883/FTP.2019.01.46984.8949