This article is cited in 4 papers

Surface, interfaces, thin films

Effect of plasma-chemical surface modification on the electron transport and work function in silicon crystals

R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: The regularities governing the surface modification of silicon crystals during microwave-plasma microprocessing in different chemically active gaseous media are investigated. This modification is shown to be caused by the formation of built-in surface potentials, which, depending on the semiconductor electrical-conductivity type, differently affect the field-emission properties and surface electron transport in devices based on them.

Received: 22.01.2018
Revised: 21.02.2018

DOI: 10.21883/FTP.2019.01.46981.8826

 English version: Semiconductors, 2019, 53:1, 14–21

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