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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 1, Pages 13–17 (Mi phts5604)

This article is cited in 2 papers

Electronic properties of semiconductors

Influence of a quantum magnetic field on the heating of charge carriers in pure germanium

V. F. Bannayaa, E. V. Nikitinab

a Moscow Pedagogical University, Moscow, Russian Federation, Moscow
b Peoples' Friendship University of Russia, Moscow

Abstract: The results of an experimental study of charge-carrier heating by an electric field $\mathbf E$ in pure $n$- and $p$-type germanium samples in a quantizing magnetic field ($\mathbf H$), at $\mathbf E\perp\mathbf H$ and under carrier photoexcitation conditions, are considered in detail. The results obtained are in qualitative agreement with the predictions of the theory of charge-carrier capture in crossed electric and magnetic fields.

Received: 14.06.2018
Revised: 21.02.2018

DOI: 10.21883/FTP.2019.01.46980.8837


 English version:
Semiconductors, 2019, 53:1, 9–13

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