This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region

A. A. Bloshkin^ab, A. I. Yakimov^a, A. V. Dvurechenskii<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-element method. The array period and aperture diameter are 1.2 and 0.7 $\mu$m, respectively. The efficiency of field enhancement is determined for different thicknesses of the active region occupied by quantum dots. It is demonstrated that the field-enhancement factor for an electromagnetic wave incident on the structure from the side of the substrate is $\sim$3.5 times larger than that for a wave incident from the opposite side. In the first case, the field-enhancement factor varies nonmonotonically with the thickness of the active region.

Received: 01.08.2018
Revised: 13.08.2018

DOI: 10.21883/FTP.2019.02.47099.8969

 English version: Semiconductors, 2019, 53:2, 195–199

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