This article is cited in 1 paper

Semiconductor physics

Investigation into the radiation hardness of photodiodes based on silicon-on-sapphire structures

Yu. A. Kabalnov^a, A. N. Trufanov^a, S. V. Obolensky<sup>b

a</sup> Sedakov Scientific Research Institute of Measurement Systems, Nizhny Novgorod, Russia
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.

Received: 10.01.2018
Revised: 13.09.2018

DOI: 10.21883/FTP.2019.03.47292.8813

 English version: Semiconductors, 2019, 53:3, 368–374

Bibliographic databases:

•