Spectroscopy, interaction with radiation

Luminescence of (ZnSe:Al):Yb сrystals at 4.2 K

V. P. Makhniy^a, N. D. Vakhnyak^b, O. V. Kinzerska^a, Yu. P. Piryatinskii<sup>c

a</sup> Chernivtsi National University named after Yuriy Fedkovych
^b Institute of Semiconductor Physics NAS, Kiev
^c Institute of Physics, National Academy of Sciences of Ukraine, Kiev

Abstract: It is established that the doping of ZnSe:Al crystals with ytterbium from the vapor phase brings about the appearance of two new bands in the low-temperature luminescence spectra. Emission in the energy range 1.15–1.35 eV is defined by transitions in Yb$^{3+}$ ions, and the edge band is defined by the LO-phonon-assisted transitions of free electrons to acceptor levels of uncontrollable Li impurities.

Received: 07.12.2017
Revised: 30.10.2018

DOI: 10.21883/FTP.2019.03.47283.8792

 English version: Semiconductors, 2019, 53:3, 310–312

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