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Semiconductor physics
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions. III. Self-heating effects
A. S. Kyuregyan
Abstract:
The self-heating effects of optoelectronic switches based on vertical high-voltage structures with
$p$–
$n$ junctions (Vertical Photoactivated Semiconductor Switches, VPSS) operating in the high-frequency mode are theoretically studied for the first time. It is shown that the strong temperature dependence of the control-radiation absorbance
$\kappa(T)$ is a major factor controlling the maximum switching frequency
$f _{\operatorname{max}}$ and the corresponding maximum crystal temperature
$T _{\operatorname{max}}$, as well as the temperature
$T$ and current density
$j$ distributions over the device area. Two-dimensional analysis of the simplest electrothermal model of a VPSS embedded into a double coaxial forming line shows that an increase in the switching frequency
$f$ leads to current displacement to the device periphery where the temperature is minimum. However, the
$T$ and
$j$ distributions over the device area remain stable at
$f<f_{\operatorname{max}}$ and
$T<T_{\operatorname{max}}$. Certainly,
$f_{\operatorname{max}}$ and
$T_{\operatorname{max}}$ depend on the control-radiation pulse energy, pulse switching power, and heat-removal conditions. For the VPSS based on indirect-gap semiconductors (Si, SiC), they vary within 20–120 kHz and 120–160
$^{\circ}$C which is quite sufficient for practical applications. However, VPSSs based on direct-gap semiconductors (GaAs, InP) are in fact inapplicable to operation in high-frequency modes due to the fact that the dependence
$\kappa(T)$ is too sharp.
Received: 31.05.2018
Revised: 24.10.2018
Accepted: 29.10.2018
DOI:
10.21883/FTP.2019.04.47453.8921
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