This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical characterization of hybrid halide perovskites based heterojunction device

Jyoti Chaudhary^a, Shaily Choudhary^a, Chandra Mohan Singh Negi^b, Saral K. Gupta^a, Ajay Singh Verma<sup>a

a</sup> Department of Physics, Banasthali Vidyapith, Banasthali, India
^b Department of Electronics, Banasthali Vidyapith, Banasthali, India

Abstract: Herein, we have measured the mobility of Hole's for the configuration FT0/TiO$_{2}$/CH$_{3}$NH$_{3}$PbBr$_{3}$/PCBM/Al by the SCLC regime. The current-voltage (I–V) characteristics of the CH$_{3}$NH$_{3}$PbBr$_{3}$ perovskite based device shows the rectifying behavior as Schottky diode. Different parameters of the proposed device such as saturation current, ideality factor, barrier height have been taken out from I–V characteristics. The highest Hole's mobility from TiO$_{2}$ thin film through the perovskite and PEDOT:PSS film to the top aluminum electrode has of order 1.59 $\cdot$ 10$^{-4}$ cm$^{2}$V$^{-1}$s$^{-1}$. Moreover, the proposed device shows the TFSCLC regime at lower voltage while, at higher voltages it shows the TCLC regime. In addition to this, some important parameters like junction resistance, capacitance and carrier lifetime of device can be measured by the spectroscopy analysis of impedance.

Received: 17.10.2018
Revised: 11.11.2018
Accepted: 11.11.2018

Language: English

DOI: 10.21883/FTP.2019.04.47448.9006

 English version: Semiconductors, 2019, 53:4, 489–492

Bibliographic databases:

•