Semiconductor structures, low-dimensional systems, quantum phenomena

Quantum confined stark effect and temperature dependencies of photoluminescence of InAs quantum dots coupled with AlGaAs/GaAs two dimensional electron gas

H. Khmissi^ab, A. M. El Sayed<sup>ac

a</sup> Physics Department, Faculty of Science, Northern Border University, Saudi Arabia
^b Universite de Monastir, Laboratoire de Micro-optoelectronique et Nanostructures, Faculte des Sciences de Monastir, Monastir, Tunisia
^c Department of Physics, Faculty of Science, Fayoum University, Egypt

Abstract: In this work, Experimental study of the influence of internal electric field and the temperature on the photoluminescence of InAs self assembled quantum dots inserted in AlGaAs/GaAs modulation doped hetero-structure have been investigated. The internal electric field is controlled by an appropriate design of the hetero-structure. We have observed a red shift of the photoluminescence position peaks result from the quantum confined Stark effect due to the local electric field existing in the structure. Estimation values of the internal electric field have been obtained through carrier's densities values in interface of AlGaAs/GaAs hetero-junction. An anomalous dependence of the full width at half maximum with temperature has been found, which attributed to the carrier's dynamics between InAs quantum dots layer and the two dimensional electron gas.

Received: 27.08.2018
Revised: 07.12.2018
Accepted: 07.12.2018

Language: English

DOI: 10.21883/FTP.2019.04.47447.8975

 English version: Semiconductors, 2019, 53:4, 484–488

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