This article is cited in 4 papers

Surface, interfaces, thin films

Micro-pits evolution on large terraces of Si(111) surface during high-temperature annealing

A. S. Petrov^a, S. V. Sitnikov^a, S. S. Kosolobov^b, A. V. Latyshev<sup>ac

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Skolkovo Institute of Science and Technology
^c Novosibirsk State University

Abstract: We have investigated in situ the morphological transformation of the Si(111) surfaces with micro-pits at large terraces during high-temperature annealing at $T$ = 1200–1400$^{\circ}$C. Experimental observation of the micro-pits kinetic decay have been performed by means of ultrahigh vacuum reflection electron microscopy. Focused ion beam system have been used for micro-pits creation at Si(111) terraces of large size. We have found that kinetic of micro-pit decay processes is affected by two dimensional vacancy islands nucleation at the micro-pit bottom when the micro-pit reaches the critical lateral size. The simple theoretical model has been proposed for describing the changes of the lateral size of micro-pit. The temperature dependence of two-dimensional vacancy islands nucleation frequency at micro-pit bottom is found to be described by the activation energy of 4.1 $\pm$ 0.1 eV.

Received: 22.10.2018
Revised: 29.10.2018
Accepted: 29.10.2018

DOI: 10.21883/FTP.2019.04.47438.9008

 English version: Semiconductors, 2019, 53:4, 434–438

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