A. V. Marchenko, P. P. Seregin, E. I. Terukov, K. B. Shakhovich, “Antisite defects in Ge–Te and Ge–As–Te semiconductor glasses”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 5,Pages <nobr>718

This article is cited in 5 papers

Amorphous, glassy, organic semiconductors

Antisite defects in Ge–Te and Ge–As–Te semiconductor glasses

A. V. Marchenko^a, P. P. Seregin^a, E. I. Terukov^b, K. B. Shakhovich^a

^a Herzen State Pedagogical University of Russia, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The formation of antisite defects in Ge$_{20}$Te$_{80}$ and Ge$_{15}$As$_{4}$Te$_{81}$ vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the $^{119mm}$Sn($^{119m}$Sn), $^{119m}$Te($^{119m}$Sn), $^{125}$Sn($^{125}$Te), and $^{125m}$Te($^{125}$Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.

Received: 27.11.2018
Revised: 03.12.2018
Accepted: 10.12.2018

DOI: 10.21883/FTP.2019.05.47570.9032