This article is cited in 11 papers

Electronic properties of semiconductors

On estimates of the electron affinity of silicon-carbide polytypes and the band offsets in heterojunctions based on these polytypes

S. Yu. Davydov

Ioffe Institute, St. Petersburg

Abstract: Two different procedures for estimating the electron affinity of SiC polytypes and the interrelation of these procedures with the results of ab initio calculations are discussed. Simple corrections to the Shockley–Anderson rules for the constructions of band diagrams of heterojunctions are proposed.

Received: 08.10.2018
Revised: 10.12.2018
Accepted: 17.12.2018

DOI: 10.21883/FTP.2019.05.47568.8995

 English version: Semiconductors, 2019, 53:5, 699–702

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