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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 5, Pages 698–701 (Mi phts5522)

This article is cited in 4 papers

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Materials based on solid solutions of bismuth chalcogenides of $n$-type conductivity prepared by melt crystallization in a liquid

L. D. Ivanova, Yu. V. Granatkina, A. G. Malchev, I. Yu. Nikhezina, M. V. Emel'yanov, D. S. Nikulin

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow, Russia

Abstract: The microstructure, mechanical, and thermoelectric properties of samples of the $n$-type Bi$_{2}$Te$_3$–Bi$_{2}$Se$_{3}$ solid-solution samples containing 6, 8, and 10 mol % Bi$_{2}$Se$_{3}$, doped with antimony iodide, cadmium chloride, and hexabromobenzene, are investigated. The samples are formed by hot pressing and the extrusion of granules prepared by melt crystallization in a liquid and ground in a mortar, cutting mill, and ball mill. Measurements are performed at room temperature and in the range of 100–600 K. The formation conditions and compositions of materials with an ultimate compressive strength of $\sim$250 MPa and thermoelectric efficiency of $(ZT)_{\operatorname{max}}$ = (0.9–1.0) in the temperature range of 320–430 K are found.

Received: 20.12.2018
Revised: 24.12.2018
Accepted: 28.12.2018

DOI: 10.21883/FTP.2019.05.47566.24


 English version:
Semiconductors, 2019, 53:5, 691–694

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