A. V. Suslov, V. M. Grabov, V. A. Komarov, E. V. Demidov, S. V. Senkevich, M. V. Suslov, “The band-structure parameters of Bi$_{1-x}$Sb$_{x}$ (0 $\le x\le$ 0.15) thin films on substrates with different thermal-expansion coefficients”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 5,Pages 616

This article is cited in 11 papers

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

The band-structure parameters of Bi$_{1-x}$Sb$_{x}$ (0 $\le x\le$ 0.15) thin films on substrates with different thermal-expansion coefficients

A. V. Suslov^a, V. M. Grabov^a, V. A. Komarov^a, E. V. Demidov^a, S. V. Senkevich^b, M. V. Suslov^a

^a Herzen State Pedagogical University of Russia, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: The report presents the positions of the conductance and valence band extremes in relation to the chemical potential of the thin bismuth–antimony films (from 0 to 15 at% Sb) on substrates with different thermal expansion. The results are based on the galvanomagnetic properties study of thermal deposited thin films. A significant increase in the concentration of charge carriers in films on substrates with a large thermal expansion was found. The results of calculating the valence band and the conduction band positions at 77 K, depending on the thermal expansion coefficient of the substrate used, are presented. The thin films plane deformation caused by the difference in the film and substrate materials thermal expansion leads to a change in the positions of the conduction band and the valence band of the films relative to their positions in a single crystal with corresponding composition

Received: 20.12.2018
Revised: 24.12.2018
Accepted: 28.12.2018

DOI: 10.21883/FTP.2019.05.47549.07