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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 5, Pages 608–611 (Mi phts5503)

This article is cited in 8 papers

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

On the band structure of Bi$_{2}$Te$_{3}$

S. A. Nemovabc, Yu. V. Ulashkevichd, A. A. Rulimova, A. E. Demchenkoa, A. A. Allahkhaha, I. V. Sveshnikovc, M. B. Dzhafarove

a Peter the Great St. Petersburg Polytechnic University
b Saint Petersburg Electrotechnical University "LETI"
c Zabaikalsky State University, Chita
d Ioffe Institute, St. Petersburg
e Azerbaijan Technical University, Ganja, Azerbaijan

Abstract: For $p$-Bi$_{2}$Te$_{3}$ crystals grown by the Czochralski method, the temperature dependences of the conductivity, Hall coefficient, thermoelectric power ($\alpha$), and transverse Nernst–Ettingshausen coefficient are obtained experimentally in the temperature range 77–450 K. The transmittance spectrum in the range 400–5250 cm$^{-1}$ is recorded at room temperature. It is shown that, to interpret the temperature dependences of the scattering parameter r and the ratio of the thermoelectric power to temperature $(\alpha/T)$, it is essential to take into account the complex valence-band structure and the contribution of heavy holes to transport phenomena. Estimations of the energy band parameters in the context of the two-band model give a hole effective mass close to the free electron mass and the energy gap between nonequivalent extrema at a level of several hundredths of eV. In the absorption spectrum derived from the transmittance spectrum, a sharp increase in absorption defined by indirect interband transitions with the band gap $E_g\approx$ 0.14 eV is observed in the region of frequencies $\nu\ge$ 1000 cm$^{-1}$. The absorption spectrum calculated from the reflectance data using the Kramers–Kronig relations is in agreement with the experimental absorption spectrum.

Received: 20.12.2018
Revised: 24.12.2018
Accepted: 28.12.2018

DOI: 10.21883/FTP.2019.05.47547.05


 English version:
Semiconductors, 2019, 53:5, 603–606

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