This article is cited in 2 papers

Semiconductor physics

Simulation approach to modeling of the avalanche breakdown of a $p$–$n$ junction

A. S. Shashkina^a, S. D. Khanin<sup>b

a</sup> St. Petersburg State Institute of Cinema and Television
^b S. M. Budyonny Military Academy of Communications, St. Petersburg, Russia

Abstract: The avalanche breakdown of a $p$–$n$ junction is investigated experimentally in order to study the temporal distribution of microplasma pulses. It is revealed that the observed type of microplasma noise is not described by the existing model of processes occurring during the avalanche breakdown of a $p$–$n$ junction. A computer model explaining the mechanisms of microplasma instability and taking into account the electric and temperature dependences of avalanche breakdown, which agrees with the experimental results, is developed using simulation modeling.

Received: 29.10.2018
Revised: 25.01.2019
Accepted: 30.01.2019

DOI: 10.21883/FTP.2019.06.47741.8983

 English version: Semiconductors, 2019, 53:6, 838–843

Bibliographic databases:

•