I. N. Arsent'ev, N. Yu. Antonishkis, D. Z. Garbuzov, V. V. Krasovskii, A. B. Komissarov, V. B. Khalfin, “Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å”, Fizika i Tekhnika Poluprovodnikov, 1987, Volume 21, Issue 1,Pages <nobr>178

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1987 Volume 21, Issue 1, Pages 178–181 (Mi phts549)

Short Notes

Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å

I. N. Arsent'ev, N. Yu. Antonishkis, D. Z. Garbuzov, V. V. Krasovskii, A. B. Komissarov, V. B. Khalfin