This article is cited in 1 paper

Surface, interfaces, thin films

Electromigration effect on vacancy islands nucleation on Si(100) surface during sublimation

S. V. Sitnikov^a, E. E. Rodyakina^ab, A. V. Latyshev<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120$^{\circ}$C.

Received: 10.12.2018
Revised: 09.01.2019
Accepted: 23.01.2019

DOI: 10.21883/FTP.2019.06.47733.9043

 English version: Semiconductors, 2019, 53:6, 795–799

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