This article is cited in 6 papers

XVI International conference ''Thermoelectrics and their applications" - 2018 (ISCTA 2018), St. Petersburg, October, 2018

Structure and thermoelectric properties of CoSi-based film composites

V. S. Kuznetsova^a, S. V. Novikov^a, C. K. Nichenametla^b, J. Calvo^b, M. Wagner-Reetz<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Fraunhofer Institute for Photonic Microsystems – Center of Nanoelectronic Technologies, Dresden, Germany

Abstract: Properties of Co–Si thin films produced by thermal treatment of Co and Si layers are studied in this article. Co/Si layers were produced by chemical vapor deposition. The two-layer structure was annealed at elevated temperatures for the formation of cobalt silicide. Thermoelectric properties of the film structures were investigated in the temperature range 300–800 K. Temperature dependences of thermopower and resistivity as well as structural data indicate the formation a multilayer structure with Si-rich and Co-rich layers.

Received: 07.02.2019
Revised: 10.02.2019
Accepted: 14.02.2019

DOI: 10.21883/FTP.2019.06.47729.38

 English version: Semiconductors, 2019, 53:6, 775–779

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