This article is cited in 8 papers

Semiconductor physics

Module of laser-radiation ($\lambda$ = 1064 nm) photovoltaic converters

V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, N. S. Potapovich, S. V. Sorokina, M. Z. Shvarts

Ioffe Institute, St. Petersburg

Abstract: The results of a study and the development of a module designed for energy transmission via atmospheric channels are presented. The four-cell module based on single-junction metamorphic InGaAs/GaAs converters grown by metal-organic vapor-phase epitaxy has an open-circuit voltage of $\sim$3 V. It is shown that the monochromatic efficiency (at a wavelength of 1064 nm) of this module is 31.5% under exposure to a Xe-lamp with a radiation power of 1.5 W/cm$^2$.

Keywords: laser radiation, photoelectric converter, module, InGaAs/GaAs, wireless energy transmission, heterostructure.

Received: 27.03.2019
Revised: 04.04.2019
Accepted: 04.04.2019

DOI: 10.21883/FTP.2019.08.48007.9118

 English version: Semiconductors, 2019, 53:8, 1110–1113

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