Electronic properties of semiconductors

Spin–orbit interaction and carrier mobility in a longitudinal insb autosoliton under a magnetic field

I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia

Abstract: A version of the spin–orbit interaction of orbitally moving and spin-oriented electrons in a longitudinal autosoliton in indium antimonide under a longitudinal magnetic field is proposed and considered. The additional energy gained by spin–orbit electrons due to this interaction is determined. Expressions for the change in the mobility during the orbital motion of electrons under a magnetic field and the additive mobility of spin-oriented electrons are derived and calculated. The coefficients of the mutual influence of changing electron mobility in the case of orbital motion and the additive mobility of spin-oriented electrons are calculated.

Keywords: autosoliton, electron, spin, diamagnetism, magneton.

Received: 30.08.2018
Revised: 13.03.2019
Accepted: 27.03.2019

DOI: 10.21883/FTP.2019.08.47991.8978

 English version: Semiconductors, 2019, 53:8, 1018–1023

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