This article is cited in 1 paper

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides

G. M. Umnyagin, V. E. Degtyarov, S. V. Obolensky

Lobachevsky State University of Nizhny Novgorod

Abstract: The current–voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of structures with different shapes of the conductive filament, such as a truncated cone with different generatrix inclination angles, are presented. It is shown how the shape and total volume of the conductive filament affects the current amplitude and the number of pulses necessary for complete filament breaking and restoration.

Keywords: resistive memory, non-stoichiometric, numerical simulation.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48138.21

 English version: Semiconductors, 2019, 53:9, 1246–1248

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