This article is cited in 3 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond

A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Korolev, S. A. Kraev, E. A. Arkhipova, E. V. Skorokhodov, P. A. Bushuikin, V. I. Shashkin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The plasma-chemical deposition of diamond-like carbon (DLC) films onto heavily boron-doped single-crystal $p$-type diamond (the concentration $\sim$10$^{20}$ cm$^{-3}$) in CH$_4$ + Ar plasma is conducted. The deposition rate is 7 nm min$^{-1}$. The elemental composition and properties of the films are studied in detail. It is found that the films are enriched with hydrogen, possess a density of 2.4 g cm$^{-3}$, and exhibit an ultrasmooth surface (with a roughness of 0.4 $\pm$ 0.2 nm).

Keywords: diamond-like carbon, plasma-chemical deposition, single-crystal diamond.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48129.12

 English version: Semiconductors, 2019, 53:9, 1203–1206

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