A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, O. E. Tereshchenko, “Surface сonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9,Pages <nobr>1207

This article is cited in 2 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Surface сonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion

A. E. Klimov^ab, A. N. Akimov^a, I. O. Akhundov^a, V. A. Golyashov^ac, D. V. Gorshkov^a, D. V. Ishchenko^a, G. Yu. Sidorov^a, S. P. Suprun^a, A. S. Tarasov^a, V. S. Epov^a, O. E. Tereshchenko^ac

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University
^c Novosibirsk State University

Abstract: The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10$^5$ are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al$_2$O$_3$ layer.

Keywords: PbSnTe:In solid solution, field effect, surface conductivity, MIS structure.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.09.48125.08