This article is cited in 2 papers

Electronic properties of semiconductors

Microwave magnetic absorption in HgSe with Co and Ni impurities

A. I. Veinger^a, I. V. Kochman^a, D. A. Frolov^a, V. I. Okulov^b, T. E. Govorkova^b, L. D. Paranchich<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
^c Chernivtsi National University

Abstract: Features of magnetic-field-dependent microwave absorption in HgSe samples doped with Co and Ni impurities in different concentrations are investigated. The electron-spin resonance spectra of weakly coupled Co atoms and peculiarities of the magnetic-absorption variation in a magnetic field passing through the zero value are established. The main parameters of the electron-spin resonance spectra and temperature and angular dependences of microwave absorption in weak fields are determined.

Keywords: electron-spin resonance, HgSe, microwave absorption, spontaneous magnetization.

Received: 29.04.2019
Revised: 13.05.2019
Accepted: 13.05.2019

DOI: 10.21883/FTP.2019.10.48299.9149

 English version: Semiconductors, 2019, 53:10, 1375–1380

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