This article is cited in 3 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

On the intracenter relaxation of shallow antimony donors in strained germanium

V. V. Tsyplenkov, V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Long-wavelength acoustic phonon-assisted relaxation rates for the excited $1s(T)$, $2p_{0}$, $2s$, $3p_{0}$, $2p_\pm$, $4p_{0}$, and $3p_\pm$ states of antimony donors in a germanium crystal are calculated. The effect of the uniaxial compressive strain of a crystal along the [111] crystallographic direction on the relaxation rates is discussed. The results of calculations are compared with the measured times of relaxation of nonequilibrium states of donor centers by the pump-probe method. A comparison with the times obtained experimentally by the submillimeter photoconductivity method is made.

Keywords: germanium, shallow donors, relaxation, radiation of phonons.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.10.48292.38

 English version: Semiconductors, 2019, 53:10, 1334–1339

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