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Fizika i Tekhnika Poluprovodnikov, 2019 Volume 53, Issue 10, Pages 1349–1353 (Mi phts5377)

This article is cited in 2 papers

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Interaction of a Tamm plasmon and exciton in an organic material in the strong coupling mode

K. M. Morozova, A. V. Belonovskiia, K. A. Ivanovb, E. I. Girshovaac, M. A. Kaliteevskiiabc

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Ioffe Institute, St. Petersburg

Abstract: The interaction of a Tamm plasmon with an exciton in an organic material in the strong coupling mode is investigated theoretically. The structure consists of five pairs of layers of silicon oxide and tantalum oxide, an organic light-emitting layer of 4,4'-bis($N$-carbazolyl)-1,1'-biphenyl, and a silver layer. It is shown that the splitting of polariton modes (Rabi splitting) with a magnitude of $>$ 400 meV can occur in such a structure, which can be accompanied by an increase in the luminescence bandwidth up to 700 meV.

Keywords: Tamm plasmon, organic light-emitting diode, exciton, strong coupling mode.

Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019

DOI: 10.21883/FTP.2019.10.48288.34


 English version:
Semiconductors, 2019, 53:10, 1314–1317

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