P. V. Seredin, A. V. Fedyukin, V. A. Terekhov, K. A. Barkov, I. N. Arsent'ev, A. D. Bondarev, E. V. Fomin, N. A. Pikhtin, “On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11,Pages <nobr>1584

This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates

P. V. Seredin^ab, A. V. Fedyukin^a, V. A. Terekhov^a, K. A. Barkov^a, I. N. Arsent'ev^c, A. D. Bondarev^c, E. V. Fomin^cd, N. A. Pikhtin^cd

^a Voronezh State University
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^c Ioffe Institute, St. Petersburg
^d Saint Petersburg Electrotechnical University "LETI"

Abstract: Thin nano-sized aluminum nitride films on GaAs (100) substrates with varying degrees of misorientation with respect to the $\langle$100$\rangle$ direction can be obtained by reactive ion-plasma deposition. It is shown that growth on substrates with different degrees of mismatch from the $\langle$100$\rangle$ direction leads to the growth of an AlN film with different phase composition and crystalline state. An increase in the degree of misorientation in the GaAs substrate used for growth is reflected both in the structural quality of nanoscale AlN films and in their electron structure, surface morphology, and optical properties. Thus, the management of the morphology, surface composition and optical functional characteristics of AlN/GaAs heterophase systems can be achieved by using the degree of misorientation of the GaAs substrates.

Keywords: AlN, GaAs, misorientation, ion-plasma deposition.

Received: 22.04.2019
Revised: 11.05.2019
Accepted: 13.05.2019

DOI: 10.21883/FTP.2019.11.48460.9147