S. N. Garibova, A. I. Isayev, S. I. Mekhtieva, S. U. Atayeva, “Structure of Se$_{95}$As$_{5}$ chalcogenide glassy semiconductor doped by EuF$_3$ impurity”, Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11,Pages 1540

This article is cited in 4 papers

Amorphous, glassy, organic semiconductors

Structure of Se$_{95}$As$_{5}$ chalcogenide glassy semiconductor doped by EuF$_3$ impurity

S. N. Garibova^ab, A. I. Isayev^a, S. I. Mekhtieva^a, S. U. Atayeva^a

^a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
^b Khazar University, Baku, Azerbaijan

Abstract: The local structure of film samples of chalcogenide glassy semiconductor Se$_{95}$As$_{5}$ and Se$_{95}$As$_{5}$(EuF$_{3}$)$_{x}$ ($x$ = 0.01–1 at%) have been studied by X-ray diffraction and Raman scattering. The “quasi-period” of the structure, the correlation length, the structural elements and chemical bonds that form the amorphous matrix of the materials studied have been determined. Interpretation of results obtained has been carried out within the framework of the Elliot voidscluster model, taking into account the chemical activity of europium ions.

Keywords: X-ray diffraction, Raman spectrum, non-crystalline semiconductor, local structure, disorder.

Received: 03.04.2019
Revised: 15.04.2019
Accepted: 22.04.2019

DOI: 10.21883/FTP.2019.11.48451.9127