This article is cited in 9 papers

Spectroscopy, interaction with radiation

Relation between the relaxation of intrinsic stimulated picosecond emission from GaAs with a characteristic charge-carrier cooling time

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow

Abstract: During the powerful picosecond optical pumping of a thin ($\sim$1 $\mu$m) GaAs layer, a stimulated intense (up to 1 GW/cm$^2$) picosecond emission appeared. As was found, for a fixed density of the pump pulse energy, with an increase of its diameter the characteristic picosecond time $\tau_r$ of the emission and carrier density $n$ relaxation increases. Due to interrelation of the density and the temperature of the carriers at high-intensity emission (in the saturation state of the emission amplification), time $\tau_r$ is associated with the characteristic temperature relaxation time $\tau_T$ of the photo-pumped carriers, which was determined earlier theoretically with the emission-caused carrier heating taken into account. The corresponding analytical expressions for $\tau_r$ as a functions of $\tau_T$ are consistent with the above experimental results.

Keywords: stimulated-emission relaxation, picosecond, charge-carrier cooling.

Received: 18.03.2019
Revised: 09.04.2019
Accepted: 23.05.2019

DOI: 10.21883/FTP.2019.11.48442.9105

 English version: Semiconductors, 2019, 53:11, 1431–1438

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