This article is cited in 6 papers

Spectroscopy, interaction with radiation

Luminescent properties of float zone silicon irradiated with swift heavy ions

S. G. Cherkova^a, V. A. Skuratov^bcd, V. A. Volodin<sup>ae

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Joint Institute for Nuclear Research, Dubna, Moscow region
^c Dubna State University, Dubna, Moscow Reg.
^d National Engineering Physics Institute "MEPhI", Moscow
^e Novosibirsk State University

Abstract: The float zone (high-resistance) silicon irradiated with swift heavy ions was studied by photoluminescence (PL) spectroscopy method. In addition to well-known X, W, W', R and C lines, a broad peak (1.3 – 1.5 $\mu$m) appears in PL spectra at low-temperatures. As the irradiation dose increases from 3$\cdot$10$^{11}$–10$^{13}$ cm$^{-2}$, the PL intensity decreases by about an order of magnitude, also a narrowing of the peak with red-shift is observed.

Keywords: photoluminescence, defects in silicon, swift heavy ions.

Received: 16.04.2019
Revised: 15.05.2019
Accepted: 17.06.2019

DOI: 10.21883/FTP.2019.11.48441.9142

 English version: Semiconductors, 2019, 53:11, 1427–1430

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