This article is cited in 7 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?

A. I. Titov, K. V. Karabeshkin, P. A. Karaseov, A. I. Struchkov

Peter the Great St. Petersburg Polytechnic University

Abstract: The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.

Keywords: GaN, ion irradiation, defect engineering, damage formation, chemical effects.

Received: 22.04.2019
Revised: 28.04.2019
Accepted: 28.04.2019

DOI: 10.21883/FTP.2019.11.48439.9145

 English version: Semiconductors, 2019, 53:11, 1415–1418

Bibliographic databases:

•