This article is cited in 8 papers

Semiconductor physics

On the application of Schottky contacts in the microwave, extremely high frequency, and THz ranges

N. A. Torkhov^ab, L. I. Babak^b, A. A. Kokolov<sup>b

a</sup> Scientific-Research Institute of Semiconductor Devices, Tomsk
^b Tomsk State University of Control Systems and Radioelectronics

Abstract: The broad range of possibilities for optimizing the design and electrical parameters of crystals of Schottky diodes, manufactured according to the mesa–substrate and mesa–mesa planar technologies with anode terminals in the form of an air bridge with a whisker, along with the use of higher quality compact models, make it possible to efficiently exploit the physical potential of Schottky contacts when designing monolithic integrated circuits according to diode technologies, increase their reliability, and overcome the significant lag of semiconductor electronics behind optoelectronics in the terahertz (THz) frequency range.

Keywords: microwaves, extremely high frequencies, THz, compact model, planar Schottky diode, whisker, air bridge.

Received: 15.07.2019
Revised: 22.07.2019
Accepted: 22.07.2019

DOI: 10.21883/FTP.2019.12.48630.9215

 English version: Semiconductors, 2019, 53:12, 1688–1698

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