Amorphous, glassy, organic semiconductors

Charge transfer in gap structures based on the chalcogenide system (As$_{2}$Se$_{3}$)$_{100-x}$Bi$_{x}$

R. A. Castro^a, S. D. Khanin^ab, A. P. Smirnov^a, A. A. Kononov<sup>a

a</sup> Herzen State Pedagogical University of Russia, St. Petersburg
^b Budyonny Military Academy of Communications, St. Petersburg, Russia

Abstract: The results of investigating charge-transfer processes in thin layers of a vitreous system (As$_{2}$Se$_{3}$)$_{100-x}$Bi$_{x}$ are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies $E_1$ = 0.12 $\pm$ 0.01 eV and $E_2$ = 0.23 $\pm$ 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states $(N)$, the hopping length $(R_\omega)$, and the largest height of the potential barrier $(W_M)$.

Keywords: vitreous system vitreous system (As$_{2}$Se$_{3}$)$_{100-x}$Bi$_{x}$, dielectric spectroscopy, conductivity, dielectric spectroscopy, conductivity, gap structures, X-ray diffraction analysis.

Received: 21.05.2019
Revised: 01.07.2019
Accepted: 10.07.2019

DOI: 10.21883/FTP.2019.12.48623.9165

 English version: Semiconductors, 2019, 53:12, 1646–1650

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