This article is cited in 2 papers

Semiconductor physics

Optimization of the In$_{0.3}$Ga$_{0.7}$As-layer thickness in a triple-junction In$_{0.3}$Ga$_{0.7}$As/GaAs/In$_{0.5}$Ga$_{0.5}$P solar cell

D. M. Legan, O. P. Pchelyakov, V. V. Preobrazhenskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The optimum absorbing-layer thickness in the bottom In$_{0.3}$Ga$_{0.7}$As subcell of a triple-junction In$_{0.3}$Ga$_{0.7}$As/GaAs/In$_{0.5}$Ga$_{0.5}$P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the range from 17 ps to 53 ns. The calculation results show that the optimum thickness varies from 0.9 to 7.5 $\mu$m. In addition, the contribution of the bottom In$_{0.3}$Ga$_{0.7}$As subcell to the efficiency of this triple-junction solar cell is estimated at various lifetime values. Its value varies from 1 to 7%.

Keywords: Numerical simulation, optimal thickness, solar cell, In$_{0.3}$Ga$_{0.7}$As, Sentaurus TCAD.

Received: 09.08.2019
Revised: 12.08.2019
Accepted: 12.08.2019

DOI: 10.21883/FTP.2020.01.48776.9240

 English version: Semiconductors, 2020, 54:1, 108–111

Bibliographic databases:

•