This article is cited in 6 papers

Electronic properties of semiconductors

Anticorrelation between the intensity of stimulated picosecond emission in GaAs and the characteristic time of charge-carrier cooling

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow

Abstract: During the powerful picosecond optical pumping, intense stimulated picosecond emission arises in a thin GaAs layer. It was found that, firstly, the maximum emission intensity decreases with increasing diameter of the pump beam (the pump energy density is fixed). Secondly, this dependence is anticorrelated with the dependence on the diameter of the characteristic relaxation time of the emission. And this time, in turn, is associated with the characteristic cooling time of charge carriers, which is slowed down due to heating of the carriers by emission. As a result, the autocorrelation indicated in the title is revealed.

Keywords: stimulated picosecond emission, cooling of charge carriers, gain saturation, Beer–Lambert–Bouguer law.

Received: 10.07.2019
Revised: 05.08.2019
Accepted: 20.08.2019

DOI: 10.21883/FTP.2020.01.48764.9209

 English version: Semiconductors, 2020, 54:1, 22–27

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