Revisiting the nature of the anomalous temperature dependence of the Hall coefficient observed for semiconductor crystals of Bi$_{2}$Te$_3$–Sb$_{2}$Te$_{3}$ solid solutions
Abstract:
It is shown based on analysis of the results of experimental investigations that a certain process that provides an increase in the electrical conductivity in the range from 4.2 to 15 K intensifies for some Bi$_{2}$Te$_3$–Sb$_{2}$Te$_{3}$ crystals, for which the electrical conductivity exceeds 1.5 $\times$ 106 S/m. The subsequent decrease in the electrical conductivity with an increase in temperature from 15 K and up to the beginning of domination of the intrinsic conductivity, which is accompanied by an anomalous increase in the Hall coefficient, can be partially caused by a decrease in this process intensity. The assumption is formulated that the influence of plasmon–phonon–polaritons under the conditions of approaching the plasmon energy and band-gap width is able to provide the inverse polarization effect, which is the basis of this process.
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