This article is cited in 2 papers

Micro- and nanocrystalline, porous, composite semiconductors

Influence of temperature on the planar GaAs nanowire morphology (simulation)

A. A. Spirina^a, N. L. Shwartz<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University

Abstract: Using a kinetic lattice Monte Carlo model, the self-catalyzed growth of planar GaAs nanowires was analyzed. The nanowire growth via the vapor-liquid-crystal mechanism was considered. The effect of temperature and the catalyst droplet location on the morphology and growth direction of planar GaAs nanowires was studied. For GaAs(111)A and GaAs(111)B substrates, a temperature range corresponding to stable growth of planar GaAs nanowires was revealed. The special asymmetric arrangement of droplets allows the one-directional nanowire growth.

Keywords: GaAs, planar nanowire, simulation, Monte Carlo.

Received: 26.09.2019
Revised: 30.09.2019
Accepted: 30.09.2019

DOI: 10.21883/FTP.2020.02.48911.9270

 English version: Semiconductors, 2020, 54:2, 212–216

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